Peter Asbeck

Professor Asbeck received the B.S., M.S. and Ph.D. degrees from MIT.  He worked at Rockwell International Science Center, where he was involved in the development of high speed devices and circuits using III-V compounds, particularly heterojunction bipolar transistors.  In 1991, he joined UCSD, where he is an emeritus Professor in the Department of Electrical and Computer Engineering. He is a member of the National Academy of Engineering, and received the IEEE Sarnoff Award for his work on HBTs.

Research Areas: High frequency transistor technologies, particularly GaN and CMOS-SOI; microwave and millimeter-wave circuits, particularly power amplifiers; and power electronics, including the development of dynamic power supplies for envelope tracking in power amplifiers